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Defect models and electrical storage mechanism in GeSbTe phase change materials

Huang, B and Robertson, J (2011) Defect models and electrical storage mechanism in GeSbTe phase change materials. Journal of Non-Crystalline Solids. ISSN 0022-3093

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:30
Last Modified: 15 Sep 2014 12:45
DOI:

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