Moradi, M and Fomani, AA and Nathan, A (2011) Effect of gate dielectric scaling in nanometer scale vertical thin film transistors. Applied Physics Letters, 99. ISSN 0003-6951Full text not available from this repository.
A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||18 May 2016 18:27|
|Last Modified:||26 May 2016 05:38|