Moradi, M and Fomani, AA and Nathan, A (2011) Effect of gate dielectric scaling in nanometer scale vertical thin film transistors. Applied Physics Letters, 99. ISSN 0003-6951
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 20 Jan 2012 12:11 |
| Last Modified: | 11 Feb 2013 01:03 |
| DOI: |
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