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Effect of gate dielectric scaling in nanometer scale vertical thin film transistors

Moradi, M and Fomani, AA and Nathan, A (2011) Effect of gate dielectric scaling in nanometer scale vertical thin film transistors. Applied Physics Letters, 99. ISSN 0003-6951

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Abstract

A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:57
Last Modified: 02 Sep 2015 02:04
DOI: 10.1063/1.3664217