Dasmahapatra, P and Sexton, J and Missous, M and Shao, C and Kelly, MJ (2013) Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level. Semiconductor Science and Technology, 27. 085007-.
Full text not available from this repository.Abstract
Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.
| Item Type: | Article |
|---|---|
| Additional Information: | Nearly 20 years after the device idea was first demonstrated, and after the failure of two previous attempts, we have at last demonstrated that the control of the thickness of a key tunnel barrier layer in a heterojunction tunnelling microwave detector diode is now at a level that can be used for pick-and-place manufacture, at very low cost. This diode has long been sought for its combination of low temperature sensitivity, wide dynamic range and detection and zero bias, but has proven unmanufacturable to date. The process of taking to manufacture is underway. |
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 05 Jan 2012 12:10 |
| Last Modified: | 29 Apr 2013 01:02 |
| DOI: |
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