Dasmahapatra, P and Sexton, J and Missous, M and Shao, C and Kelly, MJ (2013) Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level. Semiconductor Science and Technology, 27. 085007-.Full text not available from this repository.
Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:49|
|Last Modified:||29 Apr 2016 05:46|