CUED Publications database

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Dasmahapatra, P and Sexton, J and Missous, M and Shao, C and Kelly, MJ (2013) Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level. Semiconductor Science and Technology, 27. 085007-.

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Abstract

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 09 Dec 2016 17:37
Last Modified: 26 Apr 2017 00:49
DOI: