Robertson, J and Lin, L (2009) Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks. Applied Physics Letters, 95.Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||02 Sep 2016 16:34|
|Last Modified:||28 Sep 2016 23:13|