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Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

Robertson, J and Lin, L (2009) Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks. Applied Physics Letters, 95.

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 14:45
Last Modified: 30 Aug 2015 01:47
DOI: