Robertson, J and Lin, L (2009) Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks. Applied Physics Letters, 95.
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 19 Jan 2012 12:10 |
| Last Modified: | 23 Jan 2012 01:46 |
| DOI: |
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