Robertson, J and Lin, L (2009) Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks. Applied Physics Letters, 95.Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||18 May 2016 18:24|
|Last Modified:||30 May 2016 03:21|