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Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

Robertson, J and Lin, L (2009) Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks. Applied Physics Letters, 95.

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 18:24
Last Modified: 30 May 2016 03:21
DOI: