Singh, SK and Guedon, F and McMahon, R (2009) Comparative switching behaviour of silicon transistors and practical silicon carbide transistors. Proceedings of the International Conference on Power Electronics and Drive Systems. pp. 585-590.Full text not available from this repository.
The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable stress on the device and increases the transient power dissipation. A precise comparison of switching behaviour of Si and SiC devices on similar terms is the novelty of our work. The cascode is found to be an attractive fast switching device, capable of operating in two different configurations whose switching equivalent circuits are proposed here. The effect of limited dv/dt of the Si-MOSFET on the switching of the SiC-JFET in a cascode is also critically analysed.
|Uncontrolled Keywords:||Cascode Di/dt Dv/dt IGBT JFET MOSFET SiC Switching characteristics|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:26|
|Last Modified:||08 Dec 2014 02:28|