CUED Publications database

Bonding principles of passivation mechanism at III-V-oxide interfaces

Robertson, J and Lin, L (2011) Bonding principles of passivation mechanism at III-V-oxide interfaces. APPL PHYS LETT, 99. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: atomic layer deposition bonding processes defect states energy gap gallium arsenide III-V semiconductors indium compounds interface states passivation MOLECULAR-BEAM EPITAXY AMORPHOUS-SEMICONDUCTORS ELECTRONIC-STRUCTURE DEFECTS ENHANCEMENT STATES MOSFET MODEL
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:44
Last Modified: 05 Feb 2015 00:59
DOI: 10.1063/1.3665061