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Bonding principles of passivation mechanism at III-V-oxide interfaces

Robertson, J and Lin, L (2011) Bonding principles of passivation mechanism at III-V-oxide interfaces. APPL PHYS LETT, 99. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: atomic layer deposition bonding processes defect states energy gap gallium arsenide III-V semiconductors indium compounds interface states passivation MOLECULAR-BEAM EPITAXY AMORPHOUS-SEMICONDUCTORS ELECTRONIC-STRUCTURE DEFECTS ENHANCEMENT STATES MOSFET MODEL
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:42
Last Modified: 28 Jul 2014 01:08
DOI: 10.1063/1.3665061

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