Robertson, J and Lin, L (2011) Bonding principles of passivation mechanism at III-V-oxide interfaces. APPL PHYS LETT, 99. -. ISSN 0003-6951
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| Item Type: | Article |
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| Uncontrolled Keywords: | atomic layer deposition bonding processes defect states energy gap gallium arsenide III-V semiconductors indium compounds interface states passivation MOLECULAR-BEAM EPITAXY AMORPHOUS-SEMICONDUCTORS ELECTRONIC-STRUCTURE DEFECTS ENHANCEMENT STATES MOSFET MODEL |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 21 Feb 2012 14:10 |
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| Last Modified: | 20 May 2013 01:32 |
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| DOI: | 10.1063/1.3665061 |
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