Hofmann, S and Ducati, C and Robertson, J and Kleinsorge, B (2003) Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition. Applied Physics Letters, 83. pp. 135-137. ISSN 0003-6951Full text not available from this repository.
Vertically aligned carbon nanotubes were grown at temperatures as low as 120degreesC by plasma-enhanced chemical vapor deposition. A systematic study of the temperature dependence of the growth rate and the structure of the as-grown nanotubes is presented using a C2H2/NH3 system and nickel as the catalyst. The activation energy for the growth rate was found to be 0.23 eV, much less than for thermal chemical vapor deposition (1.2-1.5 eV). This suggests growth occurs by surface diffusion of carbon on nickel. The result could allow direct growth of nanotubes onto low-temperature substrates like plastics, and facilitate the integration in sensitive nanoelectronic devices. (C) 2003 American Institute of Physics.
|Additional Information:||Jul 7 Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition 696FY Times Cited:113 Cited References Count:19 English|
|Uncontrolled Keywords:||diffusion patterned growth nanofibers nickel|
|Depositing User:||Cron Job|
|Date Deposited:||04 Nov 2011 15:46|
|Last Modified:||13 Jan 2014 01:19|
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