Lophitis, N and Antoniou, M and Udrea, F and Wikstrom, T and Nistor, I (2011) Turn-off failure mechanism in large area IGCTs. In: UNSPECIFIED pp. 361-364..Full text not available from this repository.
The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Integrated Gate Commutated Turn-off Thyristor Large Area SOA|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:46|
|Last Modified:||08 Dec 2014 02:30|