CUED Publications database

Turn-off failure mechanism in large area IGCTs

Lophitis, N and Antoniou, M and Udrea, F and Wikstrom, T and Nistor, I (2011) Turn-off failure mechanism in large area IGCTs. In: UNSPECIFIED pp. 361-364..

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The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 18 May 2016 18:43
Last Modified: 29 May 2016 23:38
DOI: 10.1109/SMICND.2011.6095817