Hsieh, AP-S and Udrea, F and Lin, W-C (2011) Integrated avalanche diode for 600 v Trench IGBT over-voltage protection. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 309-312.Full text not available from this repository.
Avalanche multiplication has been one of the major destructive failure mechanisms in IGBTs; in order to avoid operating an IGBT under abnormal conditions, it is desirable to develop peripheral protecting circuits monolithically integrated without compromising the operation and performance of the IGBT. In this paper, a monolithically integrated avalanche diode (D av) for 600V Trench IGBT over-voltage protection is proposed. The mix-mode transient simulation proves the clamping capability of the D av when the IGBT is experiencing over-voltage stress in unclamped inductive switching (UIS) test. The spread of avalanche energy, which prevents hot-spot formation, through the help of the avalanche diode feeding back a large fraction of the avalanche current to a gate resistance (R G) is also explained. © 2011 IEEE.
|Uncontrolled Keywords:||avalanche diode IGBT unclamped inductive switching (UIS)|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||16 Jul 2015 14:03|
|Last Modified:||26 Jul 2015 00:02|