Camuso, G and Udrea, F and Napoli, E and Luo, X (2011) Design and optimization of a 250nm SOI LDMOSFET. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 313-316.Full text not available from this repository.
This work is aimed at optimising the static performance of a high voltage SOI LDMOSFET. Starting with a conventional LDMOSFET, 2D and 3D numerical simulation models, able to accurately match datasheet values, have been developed. Moving from the original device, several design techniques have been investigated with the target of improving the breakdown voltage and the ON-state resistance. The considered design techniques are based on the modification of the doping profile of the drift region and the Superjunction design technique. The paper shows that a single step doping within the drift region is the best design choice for the considered device and is found to give a 24% improvement in the breakdown voltage and a 17% reduction of the ON-state resistance. © 2011 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||02 Sep 2016 17:16|
|Last Modified:||01 Dec 2016 09:29|