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THRESHOLD SHIFT OF NMOS TRANSISTORS DUE TO HIGH-ENERGY ARSENIC SOURCE DRAIN IMPLANTATION

SABINE, KA and AMARATUNGA, GAJ and EVANS, AGR (1985) THRESHOLD SHIFT OF NMOS TRANSISTORS DUE TO HIGH-ENERGY ARSENIC SOURCE DRAIN IMPLANTATION. IEE PROC-I, 132. pp. 163-166. ISSN 0956-3776

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Item Type: Article
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Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:11
Last Modified: 01 May 2015 19:11
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