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THRESHOLD SHIFT OF NMOS TRANSISTORS DUE TO HIGH-ENERGY ARSENIC SOURCE DRAIN IMPLANTATION

SABINE, KA and AMARATUNGA, GAJ and EVANS, AGR (1985) THRESHOLD SHIFT OF NMOS TRANSISTORS DUE TO HIGH-ENERGY ARSENIC SOURCE DRAIN IMPLANTATION. IEE PROC-I, 132. pp. 163-166. ISSN 0956-3776

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 02 Sep 2016 16:28
Last Modified: 01 Oct 2016 22:30
DOI: