Udrea, F and Amaratunga, GAJ (1995) Steady-state analytical model for the trench insulated gate bipolar transistor. Proceedings of the International Semiconductor Conference, CAS. pp. 49-52.Full text not available from this repository.
A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 13:28|
|Last Modified:||29 Apr 2016 03:10|