Hamilton, A and Amaratunga, G (1985) CHANGES IN PREDICTED MOS DEVICE CHARACTERISTICS DUE TO THE USE OF TWO DIMENSIONAL SOURCE/DRAIN PROFILES. IEE Colloquium (Digest). ISSN 0963-3308Full text not available from this repository.
Two-dimensional MOS device simulation programs such as MINIMOS left bracket 1 right bracket are limited in their validity due to assumptions made in defining the initial two-dimensional source/drain profiles. The two options available to define source/drain regions both construct a two-dimensional profile from one-dimensional profiles normal to the surface. Inaccuracies in forming these source/drain profiles can be expected to effect predicted device characteristics as channel dimensions of the device are reduced. This paper examines these changes by interfacing numerically similated two dimensional source/drain profiles to MINIMOS and comparing predicted I//D-V//D characteristics with 2-D interfacing, 2-D profiles constructed from interfaced 1-D profiles and MINIMOS self generated profiles. Data obtained for simulations of 3 mu m N and P channel devices are presented.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||09 Dec 2016 17:57|
|Last Modified:||23 Jan 2017 06:23|