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MODELING OF ION IMPLANTATION IN A THREE-LAYER STRUCTURE USING THE METHOD OF DOSE MATCHING.

Amaratunga, GAJ and Sabine, K and Evans, AGR (1985) MODELING OF ION IMPLANTATION IN A THREE-LAYER STRUCTURE USING THE METHOD OF DOSE MATCHING. IEEE Transactions on Electron Devices, ED-32. pp. 1889-1890. ISSN 0018-9383

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Abstract

The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modeling of As** plus in poly-Si/SiO//2 /Si. Good agreement with experiment is obtained.

Item Type: Article
Subjects: UNSPECIFIED
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Depositing User: Cron job
Date Deposited: 16 Jul 2015 14:10
Last Modified: 02 Aug 2015 01:07
DOI: