Amaratunga, GAJ and Sabine, K and Evans, AGR (1985) The Modeling of Ion Implantation in a Three-Layer Structure Using the Method of Dose Matching. IEEE Transactions on Electron Devices, 32. pp. 1889-1890. ISSN 0018-9383Full text not available from this repository.
The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modelling of As<sup>+</sup> in poly-Si/SiO<inf>2</inf>/Si. Good agreement with experiment is obtained. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||09 Dec 2016 17:17|
|Last Modified:||30 Apr 2017 22:43|