CUED Publications database

MODELING OF ION IMPLANTATION IN A THREE-LAYER STRUCTURE USING THE METHOD OF DOSE MATCHING.

Amaratunga, GAJ and Sabine, K and Evans, AGR (1985) MODELING OF ION IMPLANTATION IN A THREE-LAYER STRUCTURE USING THE METHOD OF DOSE MATCHING. IEEE Transactions on Electron Devices, ED-32. pp. 1889-1890. ISSN 0018-9383

Full text not available from this repository.

Abstract

The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modeling of As** plus in poly-Si/SiO//2 /Si. Good agreement with experiment is obtained.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 30 Nov 2014 15:45
DOI: