Abu-Khaizaran, M and Palmer, P and Wang, Y (2008) Parameters influencing the performance of an IGBT gate drive. PESC Record - IEEE Annual Power Electronics Specialists Conference. pp. 3457-3462. ISSN 0275-9306Full text not available from this repository.
This paper presents an improvement of an IGBT gate drive implementing Active Voltage Control (AVC), and investigates the impact of various parameters affecting its performance. The effects of the bandwidths of various elements and the gains of AVC are shown in simulation and experimentally. Also, the paper proposes connecting a small Active Snubber between the IGBT collector and its gate integrated within the AVC. The effect of this snubber on enhancing the stability of the gate drive is demonstrated. It will be shown that using a wide bandwidth operational amplifier and integrating the Active Snubber within the gate drive reduces the minimum gate resistor required to achieve stability of the controller. Consequently, the response time of the IGBT to control signals is significantly reduced, the switching losses then can be minimised and, hence, the performance of gate drive as whole is improved. This reflects positively on turn-off and turn-on transitions achieving voltage sharing between the IGBTs connected in series to construct a higher voltage switch, making series IGBTs a feasible practice. ©2008 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 13:28|
|Last Modified:||13 Feb 2016 05:41|