Du, B and Hudgins, JL and Santi, E and Bryant, AT and Palmer, PR and Mantooth, HA (2010) Transient electrothermal simulation of power semiconductor devices. IEEE Transactions on Power Electronics, 25. pp. 237-248. ISSN 0885-8993Full text not available from this repository.
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.
|Uncontrolled Keywords:||Electrothermal modeling Fourier series Insulated gate bipolar transistor (IGBT) Transient thermal characterization|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:26|
|Last Modified:||12 Dec 2014 19:04|