CUED Publications database

Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform

Guha, PK and Santra, S and Covington, JA and Udrea, F and Gardner, JW (2011) Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform. Procedia Engineering, 25. pp. 1473-1476. ISSN 1877-7058

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Abstract

Here we report on the successful low-temperature growth of zinc oxide nanowires (ZnONWs) on silicon-on-insulator (SOI) CMOS micro-hotplates and their response, at different operating temperatures, to hydrogen in air. The SOI micro-hotplates were fabricated in a commercial CMOS foundry followed by a deep reactive ion etch (DRIE) in a MEMS foundry to form ultra-low power membranes. The micro-hotplates comprise p+ silicon micro-heaters and interdigitated metal electrodes (measuring the change in resistance of the gas sensitive nanomaterial). The ZnONWs were grown as a post-CMOS process onto the hotplates using a CMOS friendly hydrothermal method. The ZnONWs showed a good response to 500 to 5000 ppm of hydrogen in air. We believe that the integration of ZnONWs with a MEMS platform results in a low power, low cost, hydrogen sensor that would be suitable for handheld battery-operated gas sensors. © 2011 Published by Elsevier Ltd.

Item Type: Article
Uncontrolled Keywords: Nano-material sensing layer SOI CMOS gas sensor
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:14
Last Modified: 08 Dec 2014 02:22
DOI: 10.1016/j.proeng.2011.12.364