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Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Li, C and Zhang, Y and Cole, MT and Shivareddy, SG and Barnard, JS and Lei, W and Wang, B and Pribat, D and Amaratunga, GA and Milne, WI (2012) Hot electron field emission via individually transistor-ballasted carbon nanotube arrays. ACS Nano, 6. pp. 3236-3242.

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Abstract

We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:20
Last Modified: 30 Sep 2014 19:14
DOI: 10.1021/nn300111t

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