CUED Publications database

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure.

Olle, VF and Vasil'ev, PP and Wonfor, A and Penty, RV and White, IH (2012) Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure. Opt Express, 20. pp. 7035-7039.

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Abstract

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.

Item Type: Article
Uncontrolled Keywords: Equipment Design Equipment Failure Analysis Gallium Indium Lasers, Semiconductor Signal Processing, Computer-Assisted
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:56
Last Modified: 25 Aug 2014 01:13
DOI:

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