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Nature of defects and gap states in GeTe model phase change materials

Huang, B and Robertson, J (2012) Nature of defects and gap states in GeTe model phase change materials. PHYS REV B, 85. -. ISSN 1098-0121

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Item Type: Article
Uncontrolled Keywords: ELECTRON-SPIN RESONANCE AMORPHOUS-SEMICONDUCTORS CHANGE MEMORY VALENCE-ALTERNATION CRYSTALLINE SIMULATION GERMANIUM SELENIUM
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:29
Last Modified: 17 Mar 2014 15:02
DOI: 10.1103/PhysRevB.85.125305

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