Wang, H and Napoli, E and Udrea, F (2009) Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices. IEEE Transactions on Electron Devices, 56. pp. 3175-3183. ISSN 0018-9383Full text not available from this repository.
An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results. © 2009 IEEE.
|Uncontrolled Keywords:||Analytical model Charge imbalance (C.I.) Power semiconductor devices Semiconductor device modeling SJ modeling Superjunction (SJ)|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:53|
|Last Modified:||16 Feb 2015 01:19|