CUED Publications database

Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices

Wang, H and Napoli, E and Udrea, F (2009) Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices. IEEE Transactions on Electron Devices, 56. pp. 3175-3183. ISSN 0018-9383

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Abstract

An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results. © 2009 IEEE.

Item Type: Article
Uncontrolled Keywords: Analytical model Charge imbalance (C.I.) Power semiconductor devices Semiconductor device modeling SJ modeling Superjunction (SJ)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:26
Last Modified: 16 Dec 2014 19:05
DOI: 10.1109/TED.2009.2032595