Zhang, C and Yan, F and Bayer, BC and Blume, R and Van Der Veen, MH and Xie, R and Zhong, G and Chen, B and Knop-Gericke, A and Schlögl, R and Capraro, BD and Hofmann, S and Robertson, J (2012) Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication. Journal of Applied Physics, 111. ISSN 0021-8979Full text not available from this repository.
We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.
|Divisions:||Div B > Electronic Devices & Materials|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||16 Jul 2015 13:06|
|Last Modified:||30 Aug 2015 21:35|