Sohn, JI and Joo, HJ and Kim, KS and Yang, HW and Jang, A-R and Ahn, D and Lee, HH and Cha, S and Kang, DJ and Kim, JM and EWelland, M (2012) Stress-induced domain dynamics and phase transitions in epitaxially grown VO₂ nanowires. Nanotechnology, 23. 205707-.Full text not available from this repository.
We demonstrate that surface stresses in epitaxially grown VO₂ nanowires (NWs) have a strong effect on the appearance and stability of intermediate insulating M₂ phases, as well as the spatial distribution of insulating and metallic domains during structural phase transitions. During the transition from an insulating M1 phase to a metallic R phase, the coexistence of insulating M₁ and M₂ phases with the absence of a metallic R phase was observed at atmospheric pressure. In addition, we show that, for a VO₂ NW without the presence of an epitaxial interface, surface stresses dominantly lead to spatially inhomogeneous phase transitions between insulating and metallic phases. In contrast, for a VO₂ NW with the presence of an epitaxial interface, the strong epitaxial interface interaction leads to additional stresses resulting in uniformly alternating insulating and metallic domains along the NW length.
|Uncontrolled Keywords:||Computer Simulation Electric Conductivity Materials Testing Models, Chemical Models, Molecular Molecular Conformation Nanostructures Particle Size Phase Transition Stress, Mechanical Surface Properties Vanadium Compounds|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 17:14|
|Last Modified:||25 Feb 2017 00:08|