Malhan, RK and Takeuchi, Y and Kataoka, M and Mihaila, AP and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. In: UNSPECIFIED pp. 107-111..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | silicon carbide embedded epitaxy junction field effect transistor normally-off high-temperature operation GROWTH |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 07 Mar 2014 11:26 |
| Last Modified: | 10 Mar 2014 16:33 |
| DOI: | 10.1016/j.mee.2005.10.035 |
Actions (login required)
| View Item |
