CUED Publications database

Normally-off trench JFET technology in 4H silicon carbide

Malhan, RK and Takeuchi, Y and Kataoka, M and Mihaila, AP and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. In: UNSPECIFIED pp. 107-111..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: silicon carbide embedded epitaxy junction field effect transistor normally-off high-temperature operation GROWTH
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:26
Last Modified: 08 Dec 2014 02:28
DOI: 10.1016/j.mee.2005.10.035