Malhan, RK and Takeuchi, Y and Kataoka, M and Mihaila, AP and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. In: UNSPECIFIED pp. 107-111..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | silicon carbide embedded epitaxy junction field effect transistor normally-off high-temperature operation GROWTH |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 08 Nov 2011 12:46 |
| Last Modified: | 18 Nov 2013 01:12 |
| DOI: | 10.1016/j.mee.2005.10.035 |
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