Malhan, RK and Takeuchi, Y and Kataoka, M and Mihaila, AP and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. In: UNSPECIFIED pp. 107-111..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | silicon carbide embedded epitaxy junction field effect transistor normally-off high-temperature operation GROWTH |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Unnamed user with email sms67@cam.ac.uk |
| Date Deposited: | 02 Sep 2016 16:20 |
| Last Modified: | 27 Sep 2016 22:40 |
| DOI: |
