CUED Publications database

Phototransistors utilizing individual WS<inf>2</inf> nanotubes

Yang, Y and Unalan, HE and Hiralal, P and Chremmou, K and The, A and Alexandrou, I and Tenne, R and Gehan Amaratunga, AJ (2008) Phototransistors utilizing individual WS<inf>2</inf> nanotubes. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO. pp. 85-87.

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We report on the photoresponse characteristics of tungsten disulfide (WS ) nanotubes. Field effect transistors (FETs) were fabricated by using individual WS multiwall nanotubes. Photo-sensitivity to visible light is clearly observed, with enhancement of the channel conductivity, carrier mobility and carrier concentration upon illumination in the visible regime. Polarization-sensitive measurements reveal a strong anisotropy of the photocurrent on the polarization angle of the incident light with respect to the WS nanotube axis. This nano-scale transistor capable of detecting visible light would have a wide range of applications in medical and consumer electronics. © 2008 IEEE. Crown Copyright. 2 2 2

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:37
Last Modified: 13 Apr 2021 08:00
DOI: 10.1109/NANO.2008.32