Yang, Y and Unalan, HE and Hiralal, P and Chremmou, K and The, A and Alexandrou, I and Tenne, R and Gehan Amaratunga, AJ (2008) Phototransistors utilizing individual WS2 nanotubes. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO. pp. 85-87.Full text not available from this repository.
We report on the photoresponse characteristics of tungsten disulfide (WS2) nanotubes. Field effect transistors (FETs) were fabricated by using individual WS2 multiwall nanotubes. Photo-sensitivity to visible light is clearly observed, with enhancement of the channel conductivity, carrier mobility and carrier concentration upon illumination in the visible regime. Polarization-sensitive measurements reveal a strong anisotropy of the photocurrent on the polarization angle of the incident light with respect to the WS2 nanotube axis. This nano-scale transistor capable of detecting visible light would have a wide range of applications in medical and consumer electronics. © 2008 IEEE. Crown Copyright.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
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|Date Deposited:||15 Dec 2015 13:17|
|Last Modified:||11 Feb 2016 03:42|