Phototransistors utilizing individual WS2 nanotubes

Yang, Y and Unalan, HE and Hiralal, P and Chremmou, K and The, A and Alexandrou, I and Tenne, R and Gehan Amaratunga, AJ (2008) Phototransistors utilizing individual WS2 nanotubes. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO. pp. 85-87.

Abstract

We report on the photoresponse characteristics of tungsten disulfide (WS2) nanotubes. Field effect transistors (FETs) were fabricated by using individual WS2 multiwall nanotubes. Photo-sensitivity to visible light is clearly observed, with enhancement of the channel conductivity, carrier mobility and carrier concentration upon illumination in the visible regime. Polarization-sensitive measurements reveal a strong anisotropy of the photocurrent on the polarization angle of the incident light with respect to the WS2 nanotube axis. This nano-scale transistor capable of detecting visible light would have a wide range of applications in medical and consumer electronics. © 2008 IEEE. Crown Copyright.