Yang, Y and Unalan, HE and Hiralal, P and Chremmou, K and The, A and Alexandrou, I and Tenne, R and Gehan Amaratunga, AJ (2008) Phototransistors utilizing individual WS<inf>2</inf> nanotubes. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO. pp. 85-87.
Full text not available from this repository.Abstract
We report on the photoresponse characteristics of tungsten disulfide (WS ) nanotubes. Field effect transistors (FETs) were fabricated by using individual WS multiwall nanotubes. Photo-sensitivity to visible light is clearly observed, with enhancement of the channel conductivity, carrier mobility and carrier concentration upon illumination in the visible regime. Polarization-sensitive measurements reveal a strong anisotropy of the photocurrent on the polarization angle of the incident light with respect to the WS nanotube axis. This nano-scale transistor capable of detecting visible light would have a wide range of applications in medical and consumer electronics. © 2008 IEEE. Crown Copyright. 2 2 2
| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 17 Jul 2017 19:37 |
| Last Modified: | 13 Apr 2021 08:00 |
| DOI: | 10.1109/NANO.2008.32 |
