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SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

Ismail, R and Amaratunga, G (1985) SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON. IEE Colloquium (Digest). 2. 1-2. 5. ISSN 0963-3308

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 10 Mar 2014 16:11
DOI: