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SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

Ismail, R and Amaratunga, G (1985) SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON. IEE Colloquium (Digest). 2. 1-2. 5. ISSN 0963-3308

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Abstract

Process simulation programs are valuable in generating accurate impurity profiles. Apart from accuracy the programs should also be efficient so as not to consume vast computer memory. This is especially true for devices and circuits of VLSI complexity. In this paper a remeshing scheme to make the finite element based solution of the non-linear diffusion equation more efficient is proposed. A remeshing scheme based on comparing the concentration values of adjacent node was then implemented and found to remove the problems of oscillation.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 08 Dec 2014 02:40
DOI: