Dlubak, B and Kidambi, PR and Weatherup, RS and Hofmann, S and Robertson, J (2012) Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition. Applied Physics Letters, 100. ISSN 0003-6951Full text not available from this repository.
We report on a large improvement in the wetting of Al 2O 3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al 2O 3/graphene stack is then transferred to SiO 2 by standard methods. © 2012 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:42|
|Last Modified:||08 Feb 2016 03:30|