Sun, J and Lindvall, N and Cole, MT and Teo, KBK and Yurgens, A (2012) Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates. 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. pp. 11-14.Full text not available from this repository.
Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics. © 2012 IEEE.
|Uncontrolled Keywords:||chemical vapor deposition Graphene insulator nanoelectronics|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:03|
|Last Modified:||05 Feb 2015 01:21|