Fouquet, M and Bayer, BC and Esconjauregui, S and Blume, R and Warner, JH and Hofmann, S and Schlögl, R and Thomsen, C and Robertson, J (2012) Highly chiral-selective growth of single-walled carbon nanotubes with a simple monometallic Co catalyst. Physical Review B - Condensed Matter and Materials Physics, 85. ISSN 1098-0121Full text not available from this repository.
We report on the growth of single-walled carbon nanotubes from a monometallic Co catalyst on an oxidized Si wafer support by the most simple growth recipe (vacuum annealing, growth by undiluted C 2H 2). Nevertheless, multiwavelength Raman spectroscopy and transmission electron spectroscopy show a remarkable selectivity for chiral indices and thus, e.g., high abundance with a single chirality representing 58% of all semiconducting tubes. In situ x-ray photoelectron spectroscopy monitors the catalyst chemistry during carbon nanotube growth and shows interfacial Co-Si interactions that may help to stabilize the nanoparticle/nanotube diameter. We outline a two-mechanism model explaining the selective growth. © 2012 American Physical Society.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||02 Sep 2016 16:17|
|Last Modified:||01 Oct 2016 21:30|