Choe, M and Hong, WK and Park, W and Yoon, J and Jo, G and Kwon, T and Welland, ME and Lee, T (2012) UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation. Thin Solid Films, 520. pp. 3624-3628. ISSN 0040-6090Full text not available from this repository.
We investigated the UV photoconductivity characteristics of ZnO nanowire field effect transistors (FETs) irradiated by proton beams. After proton beam irradiation (using a beam energy of 10 MeV and a fluence of 10 12 cm -2), the drain current and carrier density in the ZnO nanowire FETs decreased, and the threshold voltage shifted to the positive gate bias direction due to the creation of interface traps at the SiO 2/ZnO nanowire interface by the proton beam. The interface traps produced a higher surface barrier potential and a larger depletion region at the ZnO nanowire surface, affecting the photoconductivity and its decay time. The UV photoconductivity of the proton-irradiated ZnO nanowire FETs was higher and more prolonged than that of the pristine ZnO nanowire FETs. The results extend our understanding of the UV photoconductivity characteristics of ZnO nanowire devices and other materials when irradiated with highly energetic particles. © 2012 Elsevier B.V. All rights reserved.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||09 Dec 2016 17:31|
|Last Modified:||27 Apr 2017 05:46|