Wang, X and Zhang, Y and Haque, MS and Teo, KBK and Mann, M and Unalan, HE and Warburton, PA and Udrea, F and Milne, WI (2012) Deposition of carbon nanotubes on CMOS. IEEE Transactions on Nanotechnology, 11. pp. 215-219. ISSN 1536-125XFull text not available from this repository.
We demonstrate the growth of multi wall and single wall carbon nanotubes (CNT) onto substrates containing commercial 1-m CMOS integrated circuits. The low substrate temperature growth (450°C) was achieved by using hot filament (1000 °C) to preheat the source gases (C 2H 2 and NH 3) and in situ mass spe-ctroscopy was used to identify the gas species present. Field effect transistors based on Single Walled Carbon Nanotube (SWNT) grown under such conditions were fabricated and examined. CNT growth was performed directly on the passivation layer of the CMOS integrated circuits. Individual n- and p-type CMOS transistors were compared before and after CNT growth. The transistors survive and operate after the CNT growth process, although small degradations are observed in the output current (for p-transistors) and leakage current (for both p- and n-type transistors). © 2010 IEEE.
|Uncontrolled Keywords:||CMOSFETs nanotechnology temperature control|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||16 Jul 2015 13:14|
|Last Modified:||30 Nov 2015 13:14|