Dlubak, B and Dlubak, B and Martin, MB and Martin, MB and Deranlot, C and Deranlot, C and Servet, B and Xavier, S and Mattana, R and Mattana, R and Sprinkle, M and Berger, C and Berger, C and De Heer, WA and Petroff, F and Petroff, F and Anane, A and Anane, A and Seneor, P and Seneor, P and Fert, A and Fert, A (2012) Highly efficient spin transport in epitaxial graphene on SiC. Nature Physics, 8. pp. 557-561. ISSN 1745-2473Full text not available from this repository.
Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen. © 2012 Macmillan Publishers Limited. All rights reserved.
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