Sun, J and Lindvall, N and Cole, MT and Angel, KTT and Wang, T and Teo, KBK and Chua, DHC and Liu, J and Yurgens, A (2012) Low partial pressure chemical vapor deposition of graphene on copper. IEEE Transactions on Nanotechnology, 11. pp. 255-260. ISSN 1536-125XFull text not available from this repository.
A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.
|Uncontrolled Keywords:||Chemical vapor deposition graphene low partial pressure nanoelectronics wet transfer|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:06|
|Last Modified:||28 May 2015 11:01|