Sun, J and Lindvall, N and Cole, MT and Wang, T and Booth, TJ and Bggild, P and Teo, KBK and Liu, J and Yurgens, A (2012) Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide. Journal of Applied Physics, 111. ISSN 0021-8979Full text not available from this repository.
Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp 2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13 of electric-field effect. The Hall mobility is ∼40 cm 2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. © 2012 American Institute of Physics.
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:54|
|Last Modified:||16 Apr 2015 01:09|