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Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices

RAMAN, VK and MAHMOOD, F and MCMAHON, RA and AHMED, H and JEYNES, C (1988) Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices. Japanese journal of applied physics. Pt. 1, Regular papers & short notes, 27. pp. 2333-2339. ISSN 0021-4922

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Abstract

The electrical and structural characteristics of tantalum-titanium bilayers on silicon reacted by electron beam heating have been investigated over a wide range of temperature and time conditions. The reacted layers exhibit low sheet resistance and stable electrical characteristics up to at least 1100℃. Titanium starts reacting from 750℃ onwards for 100 milliseconds reaction times whereas tantalum starts reacting only above 900℃ for such short reaction times. RBS results confirm that silicon is the major diffusing species and there is no evidence for the formation of ternary silicides. Reactions have also been explored on millisecond time scales by non-isothermal heating.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:59
Last Modified: 10 Mar 2014 18:03
DOI:

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