RAMAN, VK and MAHMOOD, F and MCMAHON, RA and AHMED, H and JEYNES, C (1988) Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices. Japanese journal of applied physics. Pt. 1, Regular papers & short notes, 27. pp. 2333-2339. ISSN 0021-4922Full text not available from this repository.
The electrical and structural characteristics of tantalum-titanium bilayers on silicon reacted by electron beam heating have been investigated over a wide range of temperature and time conditions. The reacted layers exhibit low sheet resistance and stable electrical characteristics up to at least 1100℃. Titanium starts reacting from 750℃ onwards for 100 milliseconds reaction times whereas tantalum starts reacting only above 900℃ for such short reaction times. RBS results confirm that silicon is the major diffusing species and there is no evidence for the formation of ternary silicides. Reactions have also been explored on millisecond time scales by non-isothermal heating.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||01 Aug 2012 16:11|
|Last Modified:||28 Jan 2013 01:22|
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