Tenorio-Pearl, JO and Milne, WI and Hasko, DG (2012) Cryogenic single-shot spectroscopy of a floating poly-silicon gate transistor. Journal of Applied Physics, 112. ISSN 0021-8979Full text not available from this repository.
Trapped electrons, located close to the channel of a transistor, are promising as data storage elements in non-classical information processing. Cryogenic microwave spectroscopy has shown that these electrons give rise to high quality factor resonances in the drain current and a post excitation dynamic behaviour that is related to the system lifetime. Using a floating poly-silicon gate transistor, single shot spectroscopy is performed to characterise the dynamic behaviour during excitation. This behaviour is seen to be dominated by the decay of the transient component, which gives rise to oscillations around the high quality factor resonance. © 2012 American Institute of Physics.
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|Date Deposited:||04 Feb 2015 22:16|
|Last Modified:||05 Feb 2015 00:24|