CUED Publications database

Cryogenic single-shot spectroscopy of a floating poly-silicon gate transistor

Tenorio-Pearl, JO and Milne, WI and Hasko, DG (2012) Cryogenic single-shot spectroscopy of a floating poly-silicon gate transistor. Journal of Applied Physics, 112. ISSN 0021-8979

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Trapped electrons, located close to the channel of a transistor, are promising as data storage elements in non-classical information processing. Cryogenic microwave spectroscopy has shown that these electrons give rise to high quality factor resonances in the drain current and a post excitation dynamic behaviour that is related to the system lifetime. Using a floating poly-silicon gate transistor, single shot spectroscopy is performed to characterise the dynamic behaviour during excitation. This behaviour is seen to be dominated by the decay of the transient component, which gives rise to oscillations around the high quality factor resonance. © 2012 American Institute of Physics.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:36
Last Modified: 23 Nov 2017 04:00