Hsieh, AP-S and Udrea, F and Lin, W-C (2012) 700V smart trench IGBT with monolithic over-voltage and over-current protecting functions. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 61-64. ISSN 1063-6854Full text not available from this repository.
An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.
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|Date Deposited:||04 Feb 2015 22:14|
|Last Modified:||12 Feb 2015 01:18|