CUED Publications database

Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction

Antoniou, M and Udrea, F and Tee, EKC and Pilkington, S and Pal, DK and Hoelke, A (2012) Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction. In: UNSPECIFIED pp. 89-92..

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Abstract

This paper demonstrates and discusses novel "three dimensional" silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures. The proposed designs are both compact and effective in safely distributing the electrostatic potential away from the active device area. The designs are based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The study/demonstration is done through extensive experimental measurements and numerical simulations. © 2012 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Isolation Lateral PSOI SuperJunction Termination
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:50
Last Modified: 12 Dec 2014 19:03
DOI: 10.1109/ISPSD.2012.6229030