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A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

Hsu, WCW and Udrea, F and Chang, W and Chen, M (2012) A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 377-380. ISSN 1063-6854

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The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2 , a fast turn-off time of 75 ns by the standard RG1 test (I F =0.5A, I R =1A, and I RR =0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:35
Last Modified: 19 Apr 2018 02:43