Antoniou, M and Udrea, F and Bauer, F and Mihaila, A and Nistor, I (2012) Point injection in trench insulated gate bipolar transistor for ultra low losses. In: UNSPECIFIED pp. 21-24..Full text not available from this repository.
In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:04|
|Last Modified:||28 Apr 2016 22:57|