CUED Publications database

Point injection in trench insulated gate bipolar transistor for ultra low losses

Antoniou, M and Udrea, F and Bauer, F and Mihaila, A and Nistor, I (2012) Point injection in trench insulated gate bipolar transistor for ultra low losses. In: UNSPECIFIED pp. 21-24..

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Abstract

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 15 Dec 2015 13:04
Last Modified: 28 Apr 2016 22:57
DOI: 10.1109/ISPSD.2012.6229013