Celebi, K and Choi, JW and Cole, MT and Altun, AO and Teo, KBK and Park, HG (2012) Observation of early to full covering stages of ethylene-based CVD of graphene. Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. pp. 180-183.Full text not available from this repository.
Scalable growth is essential for graphene-based applications. Recent development has enabled the achievement of the scalability by use of chemical vapor deposition (CVD) at 1000°C with copper as a catalyst and methane as a precursor gas. Here we report our observation of early stage of graphene growth based on an ethylene-based CVD method, capable of reducing the growth temperature to 770°C for monolayer graphene growth on copper. We track the early stages of slow growth under low ethylene flow rate and observe the graphene domain evolution by varying the temperature and growth time. Temperature-dependence of graphene domain density gives an apparent activation energy of 1.0 eV for nucleation.
|Uncontrolled Keywords:||CVD Ethylene Graphene Nucleation|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||16 Jul 2015 14:09|
|Last Modified:||28 Nov 2015 08:59|