Sun, J and Cole, MT and Ahmad, SA and Bäcke, O and Ive, T and Löffler, M and Lindvall, N and Olsson, E and Teo, KBK and Liu, J and Larsson, A and Yurgens, A and Haglund, A (2012) Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt. IEEE Transactions on Semiconductor Manufacturing, 25. pp. 494-501. ISSN 0894-6507Full text not available from this repository.
Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes. © 1988-2012 IEEE.
|Uncontrolled Keywords:||Chemical vapor deposition GaN graphene transparent electrodes|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:07|
|Last Modified:||01 May 2015 19:02|