Kho, ECT and Hoelke, AD and Pilkington, SJ and Pal, DK and Wan Zainal Abidin, WA and Ng, LY and Antoniou, M and Udrea, F (2012) 200-V lateral superjunction LIGBT on partial SOI. IEEE Electron Device Letters, 33. pp. 1291-1293. ISSN 0741-3106Full text not available from this repository.
This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.
|Uncontrolled Keywords:||Breakdown voltage (BV) high voltage (HV) lateral insulated-gate bipolar transistor (LIGBT) partial silicon-on-insulator (PSOI) R dson superjunction|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||16 Jul 2015 13:34|
|Last Modified:||30 Jul 2015 00:15|