Esconjauregui, S and Cepek, C and Fouquet, M and Bayer, BC and Gamalski, AD and Chen, B and Xie, R and Bhardwaj, S and Ducati, C and Hofmann, S and Robertson, J (2012) Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes. Journal of Applied Physics, 112. ISSN 0021-8979Full text not available from this repository.
Ammonia (NH 3) plasma pretreatment is used to form and temporarily reduce the mobility of Ni, Co, or Fe nanoparticles on boron-doped mono- and poly-crystalline silicon. X-ray photoemission spectroscopy proves that NH 3 plasma nitrides the Si supports during nanoparticle formation which prevents excessive nanoparticle sintering/diffusion into the bulk of Si during carbon nanotube growth by chemical vapour deposition. The nitridation of Si thus leads to nanotube vertical alignment and the growth of nanotube forests by root growth mechanism. © 2012 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:23|
|Last Modified:||26 Jan 2015 03:55|