Bauer, F and Nistor, I and Mihaila, A and Antoniou, M and Udrea, F (2012) Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT. IEEE Electron Device Letters, 33. pp. 1288-1290. ISSN 0741-3106Full text not available from this repository.
In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time. © 2012 IEEE.
|Uncontrolled Keywords:||Bipolar-to-unipolar transition superjunction insulated-gate bipolar transistor (SJ IGBT) superjunction MOSFET (SJ MOSFET)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:30|