Gillen, R and Robertson, J and Clark, SJ (2012) Electron spin resonance signature of the oxygen vacancy in HfO 2. Applied Physics Letters, 101. ISSN 0003-6951Full text not available from this repository.
The oxygen vacancy has been inferred to be the critical defect in HfO 2, responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be g xx = 1.918, g yy = 1.926, g zz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion. © 2012 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||15 Dec 2015 13:25|
|Last Modified:||05 May 2016 03:24|