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Electron spin resonance signature of the oxygen vacancy in HfO<inf>2</inf>

Gillen, R and Robertson, J and Clark, SJ (2012) Electron spin resonance signature of the oxygen vacancy in HfO<inf>2</inf>. Applied Physics Letters, 101. ISSN 0003-6951

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The oxygen vacancy has been inferred to be the critical defect in HfO 2 , responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be g xx = 1.918, g yy = 1.926, g zz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion. © 2012 American Institute of Physics.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:06
Last Modified: 01 Mar 2018 01:51