Dlubak, B and Martin, MB and Deranlot, C and Bouzehouane, K and Fusil, S and Mattana, R and Petroff, F and Anane, A and Seneor, P and Fert, A (2012) Homogeneous pinhole free 1 nm Al<inf>2</inf>O<inf>3</inf> tunnel barriers on graphene. Applied Physics Letters, 101. ISSN 0003-6951Full text not available from this repository.
We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al 2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al 2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al 2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. © 2012 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||09 Dec 2016 18:00|
|Last Modified:||26 Apr 2017 00:40|