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Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

Dlubak, B and Martin, MB and Deranlot, C and Bouzehouane, K and Fusil, S and Mattana, R and Petroff, F and Anane, A and Seneor, P and Fert, A (2012) Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene. Applied Physics Letters, 101. ISSN 0003-6951

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We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al 2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al 2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al 2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. © 2012 American Institute of Physics.

Item Type: Article
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:10
Last Modified: 07 Oct 2015 02:21
DOI: 10.1063/1.4765348