Singh, SK and Guédon, F and Garsed, PJ and McMahon, RA (2012) Half-bridge SIC inverter for hybrid electric vehicles: Design, development and testing at higher operating temperature. IET Conference Publications, 2012.Full text not available from this repository.
In recent years, Silicon Carbide (SiC) semiconductor devices have shown promise for high density power electronic applications, due to their electrical and thermal properties. In this paper, the performance of SiC JFETs for hybrid electric vehicle (HEV) applications is investigated at heatsink temperatures of 100 °C. The thermal runaway characteristics, maximum current density and packaging temperature limitations of the devices are considered and the efficiency implications discussed. To quantify the power density capabilities of power transistors, a novel 'expression of rating' (EoR) is proposed. A prototype single phase, half-bridge voltage source inverter using SiC JFETs is also tested and its performance at 25 °C and 100 °C investigated.
|Uncontrolled Keywords:||Expression of rating (EoR) IGBT JFET Silicon carbide (SiC)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:15|
|Last Modified:||08 Dec 2014 02:31|