Lophitis, N and Antoniou, M and Udrea, F and Bauer, FD and Nistor, I and Arnold, M and Wikstrom, T and Vobecky, J (2013) The destruction mechanism in GCTs. IEEE Transactions on Electron Devices, 60. pp. 819-826. ISSN 0018-9383Full text not available from this repository.
This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. © 1963-2012 IEEE.
|Uncontrolled Keywords:||Full wafer modeling gate-commutated thyristor (GCT) maximum controllable current (MCC) safe operating area thyristor|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:00|
|Last Modified:||14 Apr 2015 20:48|