CUED Publications database

The destruction mechanism in GCTs

Lophitis, N and Antoniou, M and Udrea, F and Bauer, FD and Nistor, I and Arnold, M and Wikstrom, T and Vobecky, J (2013) The destruction mechanism in GCTs. IEEE Transactions on Electron Devices, 60. pp. 819-826. ISSN 0018-9383

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Abstract

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. © 1963-2012 IEEE.

Item Type: Article
Uncontrolled Keywords: Full wafer modeling gate-commutated thyristor (GCT) maximum controllable current (MCC) safe operating area thyristor
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:12
Last Modified: 08 Dec 2014 02:30
DOI: 10.1109/TED.2012.2235442