CUED Publications database

Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Ofrim, B and Udrea, F and Brezeanu, G and Hsieh, APS (2012) Hydrogen sensor based on silicon carbide (SiC) MOS capacitor. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 367-370.

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Abstract

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:08
Last Modified: 29 Jul 2015 03:42
DOI: 10.1109/SMICND.2012.6400759