Ofrim, B and Udrea, F and Brezeanu, G and Hsieh, APS (2012) Hydrogen sensor based on silicon carbide (SiC) MOS capacitor. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 367-370.Full text not available from this repository.
Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||09 Dec 2016 18:08|
|Last Modified:||25 Feb 2017 22:09|