CUED Publications database

Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Ofrim, B and Udrea, F and Brezeanu, G and Hsieh, APS (2012) Hydrogen sensor based on silicon carbide (SiC) MOS capacitor. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 367-370.

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Abstract

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO 2 , TiO 2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO 2 based structure has better performance than the SiO 2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:25
Last Modified: 08 Aug 2017 01:52
DOI: